RJH65T46DPQ-A0

Preliminary Datasheet RJH65T46DPQ-A0 650V - 40A - IGBT Application: Power Factor Correction circuit R07DS1259EJ0100 Rev.1.00 May 18, 2015 Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology (G7H series)  High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)  Operation frequency (20kHz ≤ f ˂ 100kHz)  Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E Absolute Maximum Ratings (Tc = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode Tc = 25 °C Forward current Tc = 100 °C Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) VCES / VR VGES IC IC iC(peak) Note1 IDF IDF iDF(peak) Note1 PC j-c 650 30 80 40 300 30 15 100 340.9 0.44 V V A A A A A A W °C/W Junction to case thermal resistance (Diode) Junction temperature j-cd Tj Note2 1.33 °C/ W 175 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW  10 s, duty cycle  1% 2. Please use this device in the thermal conditions which the junction temperature does n...