MBM500E33E2-R

IGBT MODULE MBM500E33E2-R Silicon N-channel IGBT 3300V E2 version Spec.No.IGBT-SP-14005 R0 P1 FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.  High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plate/AlN substrate ABSOLUTE MAXIMUM RATINGS (Tc=25oC ) Item Symbol Unit MBM500E33E2-R Collector Emitter Voltage Gate Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Operating Junction Temperature Maximum Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals (M4/M8) Mounting (M6) VCES VGES IC ICp IF IFM Tvj,op Tvj,max Tstg VISO - V V A A °C °C °C VRMS N·m 3,300 20 500 (Tc=95 oC) 1,000 500 1,000 -40 ~ +150 175 (1) -55 ~ +125 6,000(AC 1 minute) 2/15 (2) 6 (3) Notes: (1) Only static operation is applicable. Please refer to LD-ES-130737. (2) Recommended Value 1.80.2/15+0-3N·m (3) Recommended Value 5.50.5N·m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Switching Times Turn On Time Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Turn On Loss Turn Off Loss Reverse Recovery Loss Symbol ICES IGES VCE(sa...