Dual P-channel Enhancement-mode Power MOSFETs
Advanced Power Electronics Corp.
AP4951GM-HF-3
Dual P-channel Enhancement-mode Power MOSFETs
Simple Drive Requirement...
Description
Advanced Power Electronics Corp.
AP4951GM-HF-3
Dual P-channel Enhancement-mode Power MOSFETs
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free
BVDSS R DS(ON) ID
D1
-60V 96mΩ -3.4A
D2
Description
G1
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.
G2 S1
S2
D2 D2 D1 D1
SO-8 (M)
G2
S2 G1 S1
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Rating -60 ±20 -3.4 -2.7 -20 2 0.016
-55 to 150 -55 to 150
Value 62.5
Units V V A A A W
W/°C °C °C
Unit °C/W
Ordering Information
AP4951GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200711083-3 1/5
Advanced Power Electronics Corp.
AP4951GM-HF-3
Electrical Characteristics at Tj = 25°C (unless otherwise specified)
Symbol BVDSS ∆BVDSS/∆Tj R...
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