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6N50

UTC

N-CHANNEL POWER MOSFET

6N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary 6A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N50 is a N-cha...


UTC

6N50

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Description
6N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary 6A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N50 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 1.15 Ω @ VGS=10V, ID=3.0A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N50L-TA3-T 6N50G-TA3-T 6N50L-TF3-T 6N50G-TF3-T 6N50L-TN3-R 6N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-526.c 6N50 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current Continuous (TC=25°C) Pulsed (Note 3) Avalanche Current (Note 3) VGSS ID IDM IAR ±30 6 (Note 2) 24 (Note 2) 6 V A A A Avalanche Energy Single Pulsed (Note 4) Repetitive (Note 5) EAS EAR ...




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