N-CHANNEL POWER MOSFET
6N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N50 is a N-cha...
Description
6N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N50 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 6N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.15 Ω @ VGS=10V, ID=3.0A * High Switching Speed * 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N50L-TA3-T
6N50G-TA3-T
6N50L-TF3-T
6N50G-TF3-T
6N50L-TN3-R
6N50G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-252
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tape Reel
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QW-R502-526.c
6N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current
Continuous (TC=25°C) Pulsed (Note 3)
Avalanche Current (Note 3)
VGSS ID IDM IAR
±30 6 (Note 2) 24 (Note 2)
6
V A A A
Avalanche Energy
Single Pulsed (Note 4) Repetitive (Note 5)
EAS EAR
...
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