6N70

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.9Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 700 V Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous 6A Drain Current-Single Plused 24 A Total Dissipation @TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.83 ℃/W 40 ℃/W isc website：www.iscsemi.cn 1 PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 6A ;VGS= 0 VGS= 10V; ID= 3.0A VGS= ±30V;VDS= 0 VDS=700V; VGS= 0 MIN TYPE MAX UNIT 700 V 2.0 4.0 V 1.4 V 1.9 Ω ±100 nA 250 µA isc website：www.iscsemi.cn 2 ...