Power MOSFET
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A...
Description
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800 V 800 V
±20 V ±30 V
6A 24 A
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 3 mA
V DS
=
V, GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
V = 10 V, I = 0.5 I GS D D25
6N80 6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
800 2
V 4.5 V
±100 nA
250 µA 1 mA
1.8 Ω 1.4 Ω
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate, S = Source,
G
D = Drain, TAB = Drain
Features
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH)
- easy to drive and to protect l Fast switching times
Applications
l Switch-mode and resonant-mode power supplies
l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247) (iso...
Similar Datasheet