INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
7N90
·DESCRIPTION ·Drain Current ID= ...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
7N90
·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
900 ±30
7
V V A
ID(puls)
Pulse Drain Current
28 A
Ptot Total Dissipation@TC=25℃
240 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
7N90
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS=7A ;VGS= 0 VGS= 10V; ID=3.5A VGS= ±20V;VDS= 0 VDS= 900V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
VGS=10V; ID=7A; VDD=450V; RL=25Ω
...