INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
8N18
·DESCRIPTION ·Drain Current ID= ...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
8N18
·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 180V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
180 ±20
8
V V A
ID(puls)
Pulse Drain Current
20 A
Ptot Total Dissipation@TC=25℃
75 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.67 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
8N18
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage
VDS= VGS; ID=1mA IS=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
VGS= 10V; ID=4A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 145V; VGS= 0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V; ID=4A; VDD=100V; RL=50Ω
MI...