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ALT5020 Dataheets PDF



Part Number ALT5020
Manufacturers ANADIGICS
Logo ANADIGICS
Description LTE Linear PAM
Datasheet ALT5020 DatasheetALT5020 Datasheet (PDF)

FEATURES • LTE Compliant • High Efficiency (LTE waveform): • 42% @ POUT = +27.7 dBm • Optimized for SMPS Supply • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Internal DC blocks on IN/OUT RF ports • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Wireless Handsets and Data Devices for: • LTE (B20) ALT5020 High Effici.

  ALT5020   ALT5020


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FEATURES • LTE Compliant • High Efficiency (LTE waveform): • 42% @ POUT = +27.7 dBm • Optimized for SMPS Supply • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Internal DC blocks on IN/OUT RF ports • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Wireless Handsets and Data Devices for: • LTE (B20) ALT5020 High Efficiency UMTS E800 (Band 20) LTE Linear PAM ADvanced product information - Rev 0.0 ALT5020 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module PRODUCT DESCRIPTION The ALT5020 PA is designed to provide highly linear output for LTE handsets and data devices with high efficiency at high power mode. This ANADIGICS PA can be used with an external switch mode power VBATT supply (SMPS) to improve its efficiency and reduce current consumption further at high and low output powers. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the- RFIN art reliability, temperature stability, and ruggedness. There are three selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, which VMODE2 increases handset talk and standby time. The self- contained 3 mm x 3 mm x 0.9 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. VMODE1 1 2 3 4 GND at Slug (pad) 10 VCC CPL 9 RFOUT Bias Control Voltage Regulation 8 CPLIN 7 GND VEN 5 Figure 1: Block Diagram 6 CPLOUT 09/2013 ALT5020 VBATT 1 RFIN 2 10 VCC 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 5 VEN PA Enable Voltage 6 CPLOUT Coupler Output 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC Supply Voltage 2 advanced product information - Rev 0.0 09/2013 ALT5020 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN TYP MAX UNIT RF Input (PIN) - 0 10 dBm VCC 0 3.4 5 V VBATT 0 3.4 6 V Control Voltage (VENABLE, VMODE) 0 1.8 3.5 V Storage Temperature (TSTORAGE) -40 25 150 °C Functional operation to the specified performance is not implied under these conditions. Operation of any single parameter in excess of the absolute ratings may cause permanent damage. No damage occurs if one parameter is set at the limit while all other parameters are set within normal operating ranges. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 832 - 862 MHz UMTS Band 20 Supply Voltage (VCC) +0.6 +3.4 +4.4 V POUT < +27.7 dBm Battery Voltage (VBATT) +3.1 +3.4 +4.4 V POUT < +27.7 dBm Enable Voltage (VENABLE) +1.35 0 +1.8 +3.1 0 +0.5 V PA “on” PA “shut down” Mode Control Voltage (VMODE1) +1.35 0 +1.8 +3.1 0 +0.5 V Low Bias Mode High Bias Mode RF Output Power (POUT) (1, 2, 3) LTE, HPM LTE, LPM 26.9 27.7 - 16 - dBm TS 36.101 Rel 8 for LTE Case Temperature (TC) -30 - +90 °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB. (2) For operation at 105 °C, POUT is derated by 1.0 dB. (3) LTE waveform characteristics up to 20 MHz QPSK, 18 RB’s. 3 advanced product information - Rev 0.0 09/2013 ALT5020 Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified) PARAMETER COMMENTS MIN TYP MAX UNIT POUT VCC VMODE1 VMODE2 Gain 26.5 30 18 22 14 17 33 25 21 +27.7 dBm 3.4 V 0 V 0V dB +16 dBm 1.4 V 1.8 V 0 V +7 dBm 0.7 V 1.8 V 1.8 V ACLR E-UTRA (1) at ± 10 MHz offset - -38 -34 +27.7 dBm 3.4 V 0 V 0V - -38 -34 dBc +16 dBm 1.4 V 1.8 V 0 V - -40 -34 +7 dBm 0.7 V 1.8 V 1.8 V ACLR1 UTRA (1) at ± 7.5 MHz offset - -39 -36 +27.7 dBm 3.4 V 0 V 0V - -39 -36 dBc +16 dBm 1.4 V 1.8 V 0 V - -40 -36 +7 dBm 0.7 V 1.8 V 1.8 V ACLR2 UTRA (1) at ± 12.5 MHz offset - <-60 -40 +27.7 dBm 3.4 V 0 V 0V - <-60 -40 dBc +16 dBm 1.4 V 1.8 V 0 V - <-60 -40 +7 dBm 0.7 V 1.8 V 1.8 V Efficiency (1) 33 38 - 22 - 13 - +27.7 dBm 3.4 V 0 V 0V % +16 dBm 1.4 V 1.8 V 0 V +7 dBm 0.7 V 1.8 V 1.8 V Quiescent Current (Icq) Low Bias Mode - 25 - mA through VCC pin, VMODE1,2 = +1.8 V Mode Control Current - 0.05 0.1 mA through VMODE pin, VMODE1 = 1.8 V Enable Current - 0.05 0.1 mA through VENABLE pin BATT Current - 3 5.5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - <5 10 µA VBATT = +4.4 V, VCC = +4.4 V VENABLE = 0 V, VMODE1 = 0 V Noise in Receive Band (2) - TBD - dBm/Hz 791 - 821 MHz.


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