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FEATURES • LTE Compliant • High Efficiency (LTE waveform): • 42% @ POUT = +27.7 dBm • Optimized for SMPS Supply • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator • Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Internal DC blocks on IN/OUT RF ports • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS • Wireless Handsets and Data Devices for: • LTE (B20)
ALT5020
High Efficiency UMTS E800 (Band 20)
LTE Linear PAM
ADvanced product information - Rev 0.0
ALT5020
10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module
PRODUCT DESCRIPTION
The ALT5020 PA is designed to provide highly linear
output for LTE handsets and data devices with high
efficiency at high power mode. This ANADIGICS PA
can be used with an external switch mode power VBATT
supply (SMPS) to improve its efficiency and reduce
current consumption further at high and low output
powers. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the- RFIN
art reliability, temperature stability, and ruggedness.
There are three selectable bias modes that optimize
efficiency for different output power levels, and a shutdown mode with low leakage current, which VMODE2
increases handset talk and standby time. The self-
contained 3 mm x 3 mm x 0.9 mm surface mount
package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
VMODE1
1 2 3 4
GND at Slug (pad)
10 VCC
CPL 9 RFOUT
Bias Control Voltage Regulation
8 CPLIN 7 GND
VEN 5
Figure 1: Block Diagram
6 CPLOUT
09/2013
ALT5020
VBATT
1
RFIN
2
10 VCC 9 RFOUT
VMODE2
3
8 CPLIN
VMODE1
4
7 GND
VEN 5
6 CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3 VMODE2 Mode Control Voltage 2
4 VMODE1 Mode Control Voltage 1
5 VEN PA Enable Voltage
6 CPLOUT Coupler Output
7 GND Ground
8 CPLIN Coupler Input
9
RFOUT
RF Output
10 VCC Supply Voltage
2 advanced product information - Rev 0.0 09/2013
ALT5020 ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN TYP MAX UNIT
RF Input (PIN)
- 0 10 dBm
VCC
0 3.4 5
V
VBATT
0 3.4 6
V
Control Voltage (VENABLE, VMODE)
0 1.8 3.5 V
Storage Temperature (TSTORAGE)
-40 25 150 °C
Functional operation to the specified performance is not implied under these conditions. Operation of any single parameter in excess of the absolute ratings may cause permanent damage. No damage occurs if one parameter is set at the limit while all other parameters are set within normal operating ranges.
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
832 - 862 MHz UMTS Band 20
Supply Voltage (VCC)
+0.6 +3.4 +4.4
V POUT < +27.7 dBm
Battery Voltage (VBATT)
+3.1 +3.4 +4.4
V POUT < +27.7 dBm
Enable Voltage (VENABLE)
+1.35 0
+1.8 +3.1 0 +0.5
V
PA “on” PA “shut down”
Mode Control Voltage (VMODE1)
+1.35 0
+1.8 +3.1 0 +0.5
V
Low Bias Mode High Bias Mode
RF Output Power (POUT) (1, 2, 3) LTE, HPM LTE, LPM
26.9 27.7 - 16
-
dBm TS 36.101 Rel 8 for LTE
Case Temperature (TC)
-30 - +90 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
Notes: (1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB. (2) For operation at 105 °C, POUT is derated by 1.0 dB. (3) LTE waveform characteristics up to 20 MHz QPSK, 18 RB’s.
3 advanced product information - Rev 0.0 09/2013
ALT5020
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
COMMENTS
MIN TYP MAX UNIT
POUT
VCC
VMODE1 VMODE2
Gain
26.5 30 18 22 14 17
33 25 21
+27.7 dBm 3.4 V 0 V
0V
dB +16 dBm 1.4 V 1.8 V 0 V
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR E-UTRA (1) at ± 10 MHz offset
- -38 -34
+27.7 dBm 3.4 V 0 V
0V
- -38 -34 dBc +16 dBm 1.4 V 1.8 V 0 V
- -40 -34
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR1 UTRA (1) at ± 7.5 MHz offset
- -39 -36
+27.7 dBm 3.4 V 0 V
0V
- -39 -36 dBc +16 dBm 1.4 V 1.8 V 0 V
- -40 -36
+7 dBm
0.7 V 1.8 V 1.8 V
ACLR2 UTRA (1) at ± 12.5 MHz offset
- <-60 -40
+27.7 dBm 3.4 V 0 V
0V
- <-60 -40 dBc +16 dBm 1.4 V 1.8 V 0 V
- <-60 -40
+7 dBm
0.7 V 1.8 V 1.8 V
Efficiency (1)
33 38 - 22 - 13
-
+27.7 dBm 3.4 V 0 V
0V
% +16 dBm 1.4 V 1.8 V 0 V
+7 dBm
0.7 V 1.8 V 1.8 V
Quiescent Current (Icq) Low Bias Mode
- 25 -
mA through VCC pin, VMODE1,2 = +1.8 V
Mode Control Current
- 0.05 0.1
mA through VMODE pin, VMODE1 = 1.8 V
Enable Current
- 0.05 0.1
mA through VENABLE pin
BATT Current
- 3 5.5 mA through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
<5 10
µA
VBATT = +4.4 V, VCC = +4.4 V VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band (2)
- TBD - dBm/Hz 791 - 821 MHz.