BUX48

BUX48/BUX48A ® Pb Free Plating Product BUX48/BUX48A Pb 175Watt Metal Package NPN Silicon Power Transistor 38.50 30.00 16.85 Φ1.00 Φ20.00 Max. FEATURES Designed for general-purpose switching applications. Collector-Emitter saturation voltage VCE(sat) = 1.5 Vdc (Max) @ lC = 8 Adc High voltage capability, high current capability DESCRIPTION The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and threephase mains. 26.00 Max. 10.90 13.10 Max. 8.60 1.60 12 2-Φ4.0 Thru. APPLICATIONS Switch mode power supplies Flyback and forward single transistor low power converters Inverters Solenoid and Relay drivers Motor controls Deflection circuits All dimensions in millimeters TAB 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM (1) B C (TAB) (2) E ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER VCES VCER VCEO VEBO IC ICM ICP IB IBM PD Tj Tstg TL Collector to emitter voltage (VBE = 0) Collector to emitter voltage (RBE = 10Ω) Collector to emitter voltage (IB = 0) Emitter to base voltage (IC = 0) Collector current Collector peak current Collector peak current, non repetitive (tp < 20µs) Base current Base peak current Total power dissipation Derate above 25°C TC= 25°C TC= 100°C Junction temperature Storage temperature Maximum lead temperature for soldering purposes : 1/8" from case for 5 seconds VALUE BUX48 BUX48A 850 1000...