MXP4004CT

N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters MXP4004CT Datasheet VDSS 40V RDS(ON)(MAX) 4mΩ ID 126 Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized BVDSS Capability Ordering Information Park Number Package MXP4004CT TO-220 Brand MXP Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 40 ID Continuous Drain Current 126 IDM Pulsed Drain Current @VG=10V 504 PD Power Dissipation Derating Factor above 25℃ 150 1.00 VGS Gate-to-Source Voltage +/-20 EAS Single Pulse Avalanche Energy (L=11.9mH, IAS=9A) 773 IAS Pulsed Avalanche Energy Figure 7 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 *Calculated continuous current based upon maximum allowable junction temperature, +175℃ Unit V A W W/℃ V mJ A ℃ Thermal Resistance Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Min Typ Max Unit Test Conditions Water cooled heatsink, PD 1.00 ℃/W adjusted for a peak junction Temperature of 175℃ 62 1 cubic foot chanber, free air ©MaxPower Semiconductor Inc. Page1 MXP4004CT Ver 1.0 Jan. 2011 OFF Characteristics Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage TJ=25℃ unless otherwise specified Min Typ Max Unit Test Conditions 40 V VGS=0V, ID...