MJ21196G

MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain – hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP CASE 3 NPN CASE 3 CASE 1–07 TO–204AA (TO–3) 1 BASE 1 BASE EMITTER 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. VCEO(sus) ICEO Min 250 — Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 –āā65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C Symbol RθJC Max 0.7 Unit °C/W Typical — — Max Unit — Vdc 100 µAdc (continued) Rev.05 © 2006 Thinki Semiconduct...