JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
RB160M-40 Schottky Barrier Diodes...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
RB160M-40
Schottky Barrier Diodes
FEATURES z Small surface mounting type z Low forward voltage z High reliability
SOD-123
MARKING: 74
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
DC reverse voltage
Mean rectifying current Non-repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature
Storage temperature
Symbol VR IO IFSM PD RθJA Tj Tstg
Limits 40 1 15 350 200 125
-55~+150
Electrical Ratings @TA=25℃
Parameter Forward voltage Reverse current
Symbol Min. VF IR
Typ. Max. Unit 0.51 V 30 μA
Unit V A A mW ℃/W ℃ ℃
Conditions IF=1A VR=40V
www.cj-elec.com
1
E,Mar,2015
Typical Characteristics
FORWARD CURRENT I (A) F
Forward Characteristics
2 1
℃
=100
T a
=25℃
T a
0.1
0.01 0.0
0.2 0.4 0.6
FORWARD VOLTAGE V (V) F
0.8
Capacitance Characteristics
300
T =25℃ a
f=1MHz
250
200
150
100
50
0 0 5 10 15 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
REVERSE CURRENT I (mA) R
10 1
0.1 0.01 1E-3 1E-4
0
400
Reverse Characteristics
T =100 ℃ a
T =25 ℃ a
10 20 30
REVERSE VOLTAGE V (V) R
Power Derating Curve
40
300
200
100
0 0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃) a
JUNCTION CAPACITANCE C (pF)
J
www.cj-elec.com
2
E,Mar,2015
SOD-123 Package Outline Dimensions
Symb...
