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RB160M-60

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RB160M-60 Schottky Barrier Diode ...


JCET

RB160M-60

File Download Download RB160M-60 Datasheet


Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RB160M-60 Schottky Barrier Diode FEATURES z Small Power Mold Type z Low IR z High Reliability SOD-123 MARKING: 76 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25Я Parameter Symbol DC reverse voltage VR Mean rectifying current IO Peak forward surge current @t=8.3ms 3RZHU GLVVLSDWLRQ 7KHUPDO 5HVLVWDQFH -XQFWLRQ WR $PELHQW Junction temperature IFSM PD RθJA Tj Storage temperature Tstg Limit 60 1 15   150 -55~+150 Unit V A A mW Я/W Я Я Electrical characteristics @Ta=25Я Parameter Forward voltage Symbol VF Min. Typ. Max. 0.58 Unit V Reverse current IR 30 ­A Conditions IF=1A VR=60V ZZZFMHOHFFRP  D,Mar,2015 7\SLFDO &KDUDFWHULVWLFV FORWARD CURRENT I (mA) F 1000 Pulsed Forward Characteristics 100 10000 Pulsed 1000 Reverse Characteristics T =100ć a REVERSE CURRENT I (uA) R =100ć T a 10 100 =25ć T =25ć a T a 1 10 0.1 0 250 200 100 200 300 400 FORWARD VOLTAGE V (mV) F 500 600 Capacitance Characteristics T =25ć a f=1MHz 150 100 50 0 0 5 10 15 20 25 30 REVERSE VOLTAGE V (V) R POWER DISSIPATION P (mW) D 1 0 400 350 300 250 200 150 100 50 0 0 10 20 30 40 50 REVERSE VOLTAGE V (V) R Power Derating Curve 60 25 50 75 100 AMBIENT TEMPERATURE T a (ć) 125 CAPACITANCE BETWEEN TERMINALS C (pF) T ZZZFMHOHFFRP  D,Mar,2015 SOD-123 Package Outline Dimensions ...




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