RB400D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability MARKING: D3A Solid dot = Green molding compound device,if none, the normal device. SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse Non-repetitive Peak Forward Surge Current @t=8.3ms Mean rectifying current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO PD RθJA Tj Tstg Limit 40 40 3 0.5 250 400 125 -55~+150 Electrical Ratings (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Symbol Min Typ Max Unit VR 40 V VF 0.55 V IR1 50 μA IR2 30 μA CT1 125 pF CT2 20 pF Unit V V A A mW ℃/W ℃ ℃ Conditions IR=100μA IF=0.5A VR=30V VR=10V VR=0V,f=1MHz VR=10V,f=1MHz www.cj-elec.com 1 D,Oct,2015 Typical Characteristics FORWARD CURRENT IF (mA) Forward Characteristics 1000 100 Ta=100℃ 10 1 Ta=25℃ 0.1 0.01 0 100 80 100 200 300 FORWARD VOLTAGE VF (mV) 400 500 Capacitance Characteristics Ta=25℃ f=1MHz 60 40 20 0 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) REVERSE CURRENT IR (uA) Reverse Characteristics 1000 Ta=100℃ 100 10 1 Ta=25℃ 0.1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE VR (V) Power Derating Curve 250 200 150 100 50 0 0 25 50 ...