RB461F

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes RB461F SCHOTTKY BARRIER DIODE FEATURES z Low-power rectification z For switching power supply z Ultra low VF z IF=0.7A guaranteed despite the size MARKING: 3B· SOT-323 1 3 2 Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO PD TJ TSTG Limit Unit 25 20 700 150 125 -55 ~+150 V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions Min Max IR= 200μA 20 VR=20V 200 Forward voltage VF IF=700mA 0.49 Unit V μA V www.cj-elec.com 1 D,Oct,2015 Typical Characteristics FORWARD CURRENT IF (mA) T a =100 ℃ Forward Characteristics 700 100 10 1 0 100 200 300 400 500 FORWARD VOLTAGE VF (mV) Capacitance Characteristics 300 Ta=25℃ f=1MHz 250 200 150 100 50 0 0 5 10 15 20 REVERSE VOLTAGE VR (V) T a =25℃ REVERSE CURRENT IR (uA) 10000 1000 100 10 1 0.1 0 200 Reverse Characteristics Ta=100 ℃ Ta=25 ℃ 5 10 15 REVERSE VOLTAGE VR (V) Power Derating Curve 20 150 100 50 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta (℃) CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) www.cj-elec.com 2 D,Oct,2015 SOT-323 Package Outline Dimens...