SCHOTTKY BARRIER DIODE
RB480K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encap sulate Diodes
SCHOTTLKY BARRIER DIODE
...
Description
RB480K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encap sulate Diodes
SCHOTTLKY BARRIER DIODE
SOT-353
FEATURES z Low current rectification z High reliability
MARKING: 3T
54
123
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Peak reverse voltage
VRM
45
DC reverse c1uRrQreUnHtS#HWWLWLYHPPVeak )orward6XUJH Mean rectifying current
VR IF6M IO
40 1 0.1
Power dissipation
PD
150
Thermal resistance junction to ambient Junction temperature
RθJA Tj
667 125
Storage temperature
Tstg
-55~+150
Electrical Ratings @Ta=25℃ Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol VF IR CT
Min Typ 6
Max 450 600 1 5
Unit mV µA
25 pF
Unit V V A A
mW ℃/W
℃ ℃
Conditions IF=10mA IF=100mA VR=10V VR=40V VR=0V VR=10V,f=1MHz
www.cj-elec.com
1
E,Mar,2016
Typical Characteristics
FORWARD CURRENT I (mA) F
Forward Characteristics
100
10
=25℃
℃
=100
T a
T a
1
0.1 0.0
0.2 0.4 0.6
FORWARD VOLTAGE V (V) F
0.8
Capacitance Characteristics Per Diode
30
T =25℃ a
f=1MHz
25
20
15
10
5
0 0 5 10 15 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
REVERSE CURRENT I (uA) R
Reverse Characteristics
100
T =100 ℃
10 a
1
T =25 ℃ a
0.1
0.01 0
10 20 30
REVERSE VOLTAGE V (V) R
40
Power Derating Curve
200
150
100
50
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE T (℃) a
JUNCTION CAPACITANCE C (pF)
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