RB480V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes RB480V SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability SOT-553 54 MARKING: 3T 123 3 T 3 T Solid dot = Pin1 indicate. Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Peak reverse voltage VRM 45 DC reverse Non-repetitive Peak Forward Surge Current@t=8.3ms Mean rectifying current Power Dissipation Thermal Resistance Junction to Ambient VR IFSM IO PD RθJA 40 1 0.1 150 667 Junction temperature Tj 125 Storage temperature Tstg -55~+150 Electrical Ratings @Ta=25℃ Parameter Sy Forward voltage Reverse current Capacitance between terminals mbol VF IR CT Min Typ 6 Max 450 600 1 5 25 Unit mV µA pF Unit V V A A mW ℃/W ℃ ℃ Conditions IF=10mA IF=100mA VR=10V VR=40V VR=0V VR=10V,f=1MHz www.cj-elec.com 1 F,Dec,2015 Typical Characteristics FORWARD CURRENT I (mA) F Forward Characteristics 100 10 =25℃ ℃ =100 T a T a 1 0.1 0.0 0.2 0.4 0.6 FORWARD VOLTAGE V (V) F 0.8 Capacitance Characteristics Per Diode 30 T =25℃ a f=1MHz 25 20 15 10 5 0 0 5 10 15 20 REVERSE VOLTAGE V (V) R POWER DISSIPATION P (mW) D REVERSE CURRENT I (uA) R Reverse Characteristics 100 T =100 ℃ 10 a 1 T =25 ℃ a 0.1 0.01 0 10 20 30 REVERSE VOLTAGE V (V) R 40 Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a CA...