SCHOTTKY BARRIER DIODE
RB481K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encap sulate Diodes
SCHOTTLKY BARRIER DIODE...
Description
RB481K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encap sulate Diodes
SCHOTTLKY BARRIER DIODE
SOT-353
FEATURES z Low current rectification z High reliability
MARKING: 3U
54
123
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter Peak reverse voltage DC reverse Non-repetitive Peak Forward Surge Current @t=8.3ms Mean rectifying current Power Dissipation
Thermal Resistance Junction to Ambient Junction temperature Storage temperature
Symbol VRM VR IFSM IO Pd
RθJA Tj Tstg
Limit 30 30 1 0.2
150
667 125 -55~+150
Electrical Ratings @Ta=25℃ Parameter
Forward voltage
Reverse current
Symbol Min Typ Max Unit
0.28
0.33
VF
V 0.43
0.5
IR 30 μA
Unit V V A A
mW ℃/W ℃ ℃
Conditions IF=1mA IF=10mA IF=100mA IF=200mA VR=10V
www.cj-elec.com
1
E,Mar,2016
Typical Characteristics
FORWARD CURRENT I (mA) F
T
a
=100
℃
Forward Characteristics
200 100
10
1 0.0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE V (V) F
Capacitance Characteristics
45
T =25℃ a
f=1MHz
36
27
18
9
0 0 5 10 15 20
REVERSE VOLTAGE V (V) R
T a
=25℃
REVERSE CURRENT I (uA) R
Reverse Characteristics
1000
T =100 ℃ a
100
10
T =25 ℃ a
1
0.1 0
10 20 30
REVERSE VOLTAGE V (V) R
Power Derating Curve
200
150
100
50
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE T (℃) a
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
www.cj-elec.com
2
E,Mar,2016
SOT-353 Package Outline Dimensions
SOT-353 Suggested Pad Layout
Symbol
A A1 A2 b c D E E1 e e1 L ...
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