JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB501V -40 Schottky Barrier Diode...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB501V -40
Schottky Barrier Diode
FEATURES z Low current rectifier
schottky diode z Low voltage, low inductance z For power supply
MAKINGM: 4
SOD-323
The marking bar indicates the cathode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current CNuornr-ernetp@etti=ti8v.e3mPseak Forward Surge
IO IFSM
Power dissipation
PD
Thermal Resistance Junction to Ambient RθJA
Junction temperature
Tj
Storage temperature
Tstg
Limit 45 40 0.1 1 200
500 125 -55~+150
Unit V V A A mW
℃/W ℃ ℃
Electrical Ratings @Ta=25℃ Parameter
Forward voltage Reverse current Capacitance between terminals
Symbol Min Typ VF IR CT 6
Max 0.55 0.34
30
Unit V μA
pF
Conditions IF=100mA IF=10mA VR=10V
VR=10V, f=1MHZ
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1
D,Mar,2015
Typical Characteristics
Forward Characteristics
100
100000
REVERSE CURRENT IR (nA)
=100℃
=25℃
T a
FORWARD CURRENT IF (mA)
10000
10 1000
T a
100
1 0.0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE VF (V)
10 0
Reverse Characteristics
Ta=100℃
Ta=25℃
10 20 30
REVERSE VOLTAGE VR (V)
40
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance Characteristics
50
Ta=25℃ f=1MHz
40
30
20
10
0 0 5 10 15 20
REVERSE VOLTAGE VR (V)
250 200 150 100
50 0 0
Power Derating Curve
25 50 75 100
AMBIENT TEMPERATURE Ta (℃)
125
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D,M...
