D209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification D209L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE1 DC Current Gain IC=5A ; VCE= 5V hFE2 DC Current Gain IC=8A ; VCE= 5V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A fT Current Gain Bandwidth Product VCE=10V,IC=100mA,f=1MHZ Switching times ts Storage Time tf Fall Time IC= 8A , IB1= -IB2= 1.6A MIN TYP. MAX UNIT 400 V 700 V 0.01 mA 8 40 6 30 1.0 V 1.2 V 5 MHZ 3.0 μs 0.7 μs isc website：www.iscsemi.cn 2 ...