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Power Transistor. D209L Datasheet

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Power Transistor. D209L Datasheet






D209L Transistor. Datasheet pdf. Equivalent




D209L Transistor. Datasheet pdf. Equivalent





Part

D209L

Description

Silicon NPN Power Transistor



Feature


INCHANGE Semiconductor isc Silicon NPN P ower Transistor DESCRIPTION ·High Coll ector-Emitter Breakdown Voltage- : V(BR )CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specifi cation D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Hi gh frequency inverters ·General purpos e power amplifiers ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL PA.
Manufacture

Inchange Semiconductor

Datasheet
Download D209L Datasheet


Inchange Semiconductor D209L

D209L; RAMETER VALUE UNIT VCBO Collector-Ba se Voltage 700 V VCEO Collector-Emit ter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Conti nuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www .iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Tran.


Inchange Semiconductor D209L

sistor isc Product Specification D209L ELECTRICAL CHARACTERISTICS TC=25℃ un less otherwise specified SYMBOL PARAM ETER CONDITIONS V(BR)CEO Collector-Em itter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Vo ltage IC= 1mA ; IE= 0 IEBO Emitter Cu toff Current VEB= 7V; IC=0 hFE1 DC Cu rrent Gain IC=5A ; VCE= 5V hFE2 DC Cu rrent Gain IC=8A ; .


Inchange Semiconductor D209L

VCE= 5V VCE(sat) Collector-Emitter Satu ration Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 8 A; IB= 1.6A fT Current Gain Bandwidth Product VCE=10V,IC=100mA,f=1MHZ Switc hing times ts Storage Time tf Fall Tim e IC= 8A , IB1= -IB2= 1.6A MIN TYP. M AX UNIT 400 V 700 V 0.01 mA 8 40 6 30 1 .0 V 1.2 V 5 MHZ 3.0 μs 0.7 μs isc w ebsite:www.iscsemi.c.

Part

D209L

Description

Silicon NPN Power Transistor



Feature


INCHANGE Semiconductor isc Silicon NPN P ower Transistor DESCRIPTION ·High Coll ector-Emitter Breakdown Voltage- : V(BR )CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specifi cation D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Hi gh frequency inverters ·General purpos e power amplifiers ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL PA.
Manufacture

Inchange Semiconductor

Datasheet
Download D209L Datasheet




 D209L
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
isc Product Specification
D209L
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base voltage
9V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
12 A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1




 D209L
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
D209L
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC=0
hFE1 DC Current Gain
IC=5A ; VCE= 5V
hFE2 DC Current Gain
IC=8A ; VCE= 5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
fT Current Gain Bandwidth Product
VCE=10V,IC=100mA,f=1MHZ
Switching times
ts Storage Time
tf Fall Time
IC= 8A , IB1= -IB2= 1.6A
MIN TYP. MAX UNIT
400 V
700 V
0.01 mA
8 40
6 30
1.0 V
1.2 V
5 MHZ
3.0 μs
0.7 μs
isc websitewww.iscsemi.cn
2







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