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D209L Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
| Part | D209L |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon NPN P ower Transistor DESCRIPTION ·High Coll ector-Emitter Breakdown Voltage- : V(BR )CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specifi cation D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Hi gh frequency inverters ·General purpos e power amplifiers ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL PARAMETER VAL UE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Colle ctor Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | D209L |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon NPN P ower Transistor DESCRIPTION ·High Coll ector-Emitter Breakdown Voltage- : V(BR )CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specifi cation D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Hi gh frequency inverters ·General purpos e power amplifiers ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL PARAMETER VAL UE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Colle ctor Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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