D44C SERIES
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D...
D44C SERIES
SILICON
NPN POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon
NPN power
transistors designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC ΘJA
D44C1 D44C4 D44C2 D44C5 D44C3 D44C6
40 55
D44C7 D44C8 D44C9
70
30 45
60
5.0
4.0
6.0
30
-65 to +150
4.2
75
D44C10 D44C11 D44C12
90
80
UNITS V V V A A W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
BVCEO
IC=100mA (D44C1, 2, 3)
30
BVCEO
IC=100mA (D44C4, 5, 6)
45
BVCEO
IC=100mA (D44C7, 8, 9)
60
BVCEO
IC=100mA (D44C10, 11, 12)
80
VCE(SAT) IC=1.0A, IB=50mA
(D44C2, 3, 5, 6, 8, 9, 11, 12)
VCE(SAT) VBE(SAT) Cob fT td+tr ts tf
IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA IC=1.0A, IB1=IB2=100mA
50 100 500 75
MAX 10 100
0.5 0.5 1.3 100
UNITS μA μA V V V V
V V V pF MHz ns ns ns
R1 (4-March 2014)
D44C SERIES
SILICON
NPN POWER
TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless ot...