D44C3

D44C SERIES SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC ΘJA D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 40 55 D44C7 D44C8 D44C9 70 30 45 60 5.0 4.0 6.0 30 -65 to +150 4.2 75 D44C10 D44C11 D44C12 90 80 UNITS V V V A A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=Rated VCES IEBO VEB=5.0V BVCEO IC=100mA (D44C1, 2, 3) 30 BVCEO IC=100mA (D44C4, 5, 6) 45 BVCEO IC=100mA (D44C7, 8, 9) 60 BVCEO IC=100mA (D44C10, 11, 12) 80 VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) VCE(SAT) VBE(SAT) Cob fT td+tr ts tf IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA IC=1.0A, IB1=IB2=100mA 50 100 500 75 MAX 10 100 0.5 0.5 1.3 100 UNITS μA μA V V V V V V V pF MHz ns ns ns R1 (4-March 2014) D44C SERIES SILICON NPN POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless ot...