D44C4

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification D44C4 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C4 APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 55 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak 6A IB Base Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1A 30 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification D44C4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA ICES Collector Cutoff Current VCE= 55V, VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 V 1.3 V 10 μA 100 μA hFE-1 DC Current Gain IC= 0.2A; VCE=...