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HBR20100U

JILIN SINO

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR20100U MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 100 V 175 ℃ 0.62...


JILIN SINO

HBR20100U

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R SCHOTTKY BARRIER DIODE HBR20100U MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 100 V 175 ℃ 0.62V (@Tj=125℃)   APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications TO-22O TO-22OHF TO-22OB  ,  , (RoHS) FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product ORDER MESSAGE Order codes Marking Package HBR20100UZ HBR20100U TO-220 HBR20100UZR HBR20100U TO-220 HBR20100UZ HBR20100U TO-220B HBR20100UZR HBR20100U TO-220B HBR20100UHF HBR20100U TO-220HF HBR20100UHFR HBR20100U TO-220HF Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.):201404B 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Repetitive peak reverse voltage VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220HF) per device IF(AV) per diode Surge non repetitive forward current ( 8.3ms — JEDEC ) IFSM 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Tj Storage temperature range TSTG HBR20100U ValuU 100 Unit V 100 V 20 A 10 200 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter Tests conditions Value(min) Value(typ) Value(max) Tj =25℃ I...




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