DatasheetsPDF.com

HBR20S45

JILIN SINO

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR20S45 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20A 45 V 175 ℃ 0.58V (20A T...


JILIN SINO

HBR20S45

File Download Download HBR20S45 Datasheet


Description
R SCHOTTKY BARRIER DIODE HBR20S45 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20A 45 V 175 ℃ 0.58V (20A Tj=125℃)   APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications TO-220 TO-262 ,  , (RoHS) FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product ORDER MESSAGE Order codes Marking Package HBR20S45Z HBR20S45 TO-220 HBR20S45ZR HBR20S45 TO-220 HBR20S45B HBR20S45 TO-262 HBR20S45BR HBR20S45 TO-262 Halogen Free NO YES NO YES Packaging Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev):201503B 1/6 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Maximum DC blocking voltage Average forward current TC=150℃ Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Storage temperature range HBR20S45 Symbol VRRM Value 45 Unit V VDC 45 V IF(AV) 20 A IFSM 300 A Tj TSTG 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter Tests conditions Value(min) Value(typ) Value(max) Tj =25℃ IR Tj =125℃ VR=VRRM 25 5 Tj =25℃ Tj =125℃ VF Tj =25℃ Tj =125℃ IF=10A IF=20A 0.52 0.57 0.44 0.48 0.59 0.67 0.54 0.58 Unit μA mA V V V V THERMAL CHARACTERISTICS Parameter Thermal resistance from junction to case T...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)