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HBR20S45S

JILIN SINO

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR20S45S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20A 45 V 175 ℃ 0.6V (20A T...


JILIN SINO

HBR20S45S

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R SCHOTTKY BARRIER DIODE HBR20S45S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20A 45 V 175 ℃ 0.6V (20A Tj=125℃) l l APPLICATIONS l High frequency switch power supply l Free wheeling diodes, polarity protection applications TO-220 TO-262 l, l l, l(RoHS) FEATURES lLow power loss, high efficiency lHigh Operating Junction Temperature lGuard ring for overvoltage protection,High reliability lRoHS product ORDER MESSAGE Order codes Marking Package HBR20S45SZ HBR20S45S TO-220 HBR20S45SZR HBR20S45S TO-220 HBR20S45SB HBR20S45S TO-262 HBR20S45SBR HBR20S45S TO-262 Halogen Free NO YES NO YES Packaging Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev):201503B 1/6 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Maximum DC blocking voltage Average forward current TC=150℃ Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Storage temperature range HBR20S45S Symbol VRRM Value 45 Unit V VDC 45 V IF(AV) 20 A IFSM 275 A Tj TSTG 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter Tests conditions Value(min) Value(typ) Value(max) Tj =25℃ IR Tj =125℃ VR=VRRM 25 5 Tj =25℃ Tj =125℃ VF Tj =25℃ Tj =125℃ IF=10A IF=20A 0.56 0.58 0.46 0.50 0.62 0.68 0.56 0.60 Unit µA mA V V V V THERMAL CHARACTERISTICS Parameter Thermal resistance from junction to c...




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