HBR2150

R SCHOTTKY BARRIER DIODE HBR2150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications DO-41 DO-15 SMA  ，  ， （RoHS） FEATURES Axial Lead Rectifier Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product ORDER MESSAGE Order codes Marking Package HBR2150Y HBR2150 DO-41 HBR2150YR HBR2150 DO-41 HBR2150Q HBR2150 DO-15 HBR2150QR HBR2150 DO-15 HBR2150X HBR2150 SMA HBR2150XR HBR2150 SMA Halogen Free NO YES NO YES NO YES Packaging Tape Tape Tape Tape Tape Tape Device Weight 0.28g(approx.) 0.28g(approx.) 0.33g(approx.) 0.33g(approx.) 0.071g(approx.) 0.071g(approx.) (Rev.)：201403A 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Repetitive peak reverse voltage VRRM Maximum DC blocking voltage VDC TC=125℃ Average Rectified Forward Current IF(AV) Surge non repetitive forward current （ 8.3ms — JEDEC ） IFSM 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Tj Storage temperature range TSTG HBR2150 Value 150 Unit V 150 V 2A 50 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ) Value(max) 10 5 VF Tj =25℃ Tj =125℃ IF=2A 0.80 0.9 0.70 0.76 Unit μA mA V V ...