FTB1366

SEMICONDUCTOR TECHNICAL DATA FTB1366 FTB1366 TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PC Collector power dissipation 2W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Fall time Storage time CLASSIFICATION OF hFE(1) Rank Range Symbol Test conditions V(BR)CBO IC=-1mA, IE=0 V(BR)CEO IC=-50mA, IB=0 V(BR)EBO IE=-1mA, IC=0 ICBO VCB=-60V, IE=0 IEBO VEB=-7V, IC=0 hFE(1) VCE=-5V, IC=-0.5A hFE(2) VCE(sat) VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VBE VCE=-5V, IC=-0.5A fT VCE=-5V, IC=-0.5A Cob VCB=-10V, IE=0, f=1MHz tf IC=-2A, IB1=-IB2=-0.2A VCC=-30V ts O 60-120 Min Typ Max Unit -60 V -60 V -7 V -100 µA -100 µA 60 200 20 -1 V -1 V 9 MHz 150 pF 0.4 µs 1.7 µs Y 100-200 2012. 02. 27 Revision No : 0 1/2 FTB1366 2012.02. 27 Revision No : 0 2/2 ...