AM5920N

Analog Power AM5920N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) 20 rDS(on) m(Ω) 58 @ VGS = 4.5V 82 @ VGS = 2.5V CF1206-8 Top View D1 ID (A) 5.0 4.2 D2 Low rDS(on) provides higher efficiency and S1 1 extends battery life G1 2 Low thermal impedance copper leadframe S2 3 CF1206-8 saves board space G2 4 Fast switching speed High performance trench technology 8 7 D1 D1 G1 G2 6 5 D2 D2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESSOTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 20 ±8 V 5.0 4.1 A ± 30 Continuous Source Current (Diode Conduction)a IS 1.7 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 2.1 1.3 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 62.5 80 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publ...