INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N90
·FEATURES ·Drain Current ID= 12...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
12N90
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.95Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply ·DC-DC converters ·AC motor control
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS ID IDM PD Tj Tstg
Drain-Source Voltage
900 V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
12 A
Drain Current-Single Plused
48 A
Total Dissipation @TC=25℃
225 W
Max. Operating Junction Temperature
150
℃
Storage Temperature
-55~150 ℃
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
12N90
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 12A ;VGS= 0 VGS= 10V; ID= 6A VGS= ±20V;VDS= 0 VDS=720V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
VGS=10V; ID=6A; VDD=450V; RGS=2Ω
MIN TYP...