14N05

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 14N05 ·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters motor drivers and relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 50 ±10 V V ID Drain Current-Continuous 14 A PD Total Dissipation @TC=25℃ 48 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 14N05 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 14A ;VGS= 0 VGS= 10V; ID= 14A VGS= ±10V;VDS= 0 VDS=40V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; RGS=0.6Ω ID=7A; VDD=25V; RL=3.57Ω MIN TYPE MAX UNIT 50 V 2.0 4.0 V ...