DatasheetsPDF.com

15N60 Dataheets PDF



Part Number 15N60
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet 15N60 Datasheet15N60 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A .

  15N60   15N60


Document
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N60 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 15A ;VGS= 0 VGS= 10V; ID= 7.5A VGS= ±30V;VDS= 0 VDS=600V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; ID=15A; VDD=325V; RG=21.7Ω 15N60 MIN TYPE MAX UNIT 600 V 3.0 5.0 V 1.4 V 0.44 Ω ±100 nA 1 µA 2380 3095 23.6 35.5 pF 295 385 125 260 65 140 ns 65 140 105 220 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


15N45 15N60 17N60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)