N-Channel MOSFET
SMD Type
■ Features
● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) < 5Ω (VGS = 4V) ● RDS(ON) < 3Ω (VGS = 10V)
N-Channel MOSFET ...
Description
SMD Type
■ Features
● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) < 5Ω (VGS = 4V) ● RDS(ON) < 3Ω (VGS = 10V)
N-Channel MOSFET 2SK1582
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
+0.12.4 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
MOSFET
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
0-0.1 +0.10.38
-0.1
1. Gate 2. Source 3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Ta = 25℃
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol VDS VGS ID IDM PD TJ Tstg
Rating 30
±20 200 400 200 150 -55 to 150
Unit V
mA mW ℃
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Symbol VDSS IDSS IGSS VGS(off)
RDS(On)
gFS Ciss Coss Crss td(on)
tr td(off)
tf
Test Conditions ID=250μA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=5 V ID=1uA VGS=4V, ID=10m A VGS=10V, ID=10m A VDS=5V, ID=10m A
VGS=0V, VDS=5V, f=1MHz
VGS(on)=5V, VDS=5V, ID=10mA, RL=500Ω,RG=10Ω
Min Typ Max Unit
30 V
1 uA
±1 uA
0.8 1.8 V
5 Ω
3
20 60
mS
28
30 pF
7
55
200 ns
180
250
■ Marking
Marking
G15
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SMD Type
■ Typical Charac...
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