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C4538 Dataheets PDF



Part Number C4538
Manufacturers SavantIC
Logo SavantIC
Description 2SC4538
Datasheet C4538 DatasheetC4538 Datasheet (PDF)

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4538 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC Collector-base voltage Collector.

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www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4538 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction case VALUE 900 800 10 5 3 80 150 -55~150 UNIT V V V A A W MAX 1.5 UNIT /W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4538 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A ICBO Collector cut-off current VCB=900V; IE=0 IEBO Emitter cut-off current VEB=10V; IC=0 hFE DC current gain IC=2A ; VCE=5V Switching times ton Turn-on time tstg Storage time tf Fall time IC=3A;RL=100B IB1=0.6A; IB2=-1.2A Pw = 20µs; DutyD2% MIN TYP. MAX UNIT 900 V 800 V 10 V 1.0 V 1.5 V 1.0 mA 1.0 mA 10 1.0 µs 4.0 µs 0.8 µs 2 www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SC4538 Fig.2 Outline dimensions 3 www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4538 4 .


ED060XG1 C4538 MZC2.4A5


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