Document
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4538
DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
IB Base current
PC Collector power dissipation Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE 900 800 10 5 3 80 150
-55~150
UNIT V V V A A W
MAX 1.5
UNIT /W
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4538
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
VCB=900V; IE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
Switching times
ton Turn-on time tstg Storage time tf Fall time
IC=3A;RL=100B IB1=0.6A; IB2=-1.2A Pw = 20µs; DutyD2%
MIN TYP. MAX UNIT 900 V 800 V 10 V
1.0 V 1.5 V 1.0 mA 1.0 mA 10
1.0 µs 4.0 µs 0.8 µs
2
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4538
Fig.2 Outline dimensions 3
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4538
4
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