2SD2558Darlington
Equivalent circuit B
C
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Series...
2SD2558Darlington
Equivalent circuit B
C
(70Ω) E
Silicon
NPN Triple Diffused Planar
Transistor
Application : Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SD2558 200 200 6 5 2
60(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=200V
VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz
(Ta=25°C)
2SD2558 100max
5max
Unit µA mA
200min
V
1500 to 6500
1.5max
V
15typ
MHz
110typ
pF
External Dimensions FM100(TO3PF)
0.8±0.2
15.6±0.2
5.5±0.2 3.45 ±0.2
5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
1.75
2.15
1.05
+0.2 -0.1
0.8
5.45±0.1
5.45±0.1
0.65
+0.2 -0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Type No. B C E b. Lot No.
Collector Current IC(A) IB=1.0A
I C– V CE Characteristics (Typical)
5
250mA
5
0
m
A 1
0
mA
4 2.5mA
3 1.2mA
0.6mA 2
0.3mA 1
0 02 4 6 Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 5
4
Collector Current IC(A) –23510˚˚25CC˚((CC(CaaCsaseseeTTeTeemmmp)pp))
3
2
1
0 0 1 2 2.5 Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
DC Current Gain hFE
h FE– I C Temperature Characteristics (Typical)
8000 5000
(VCE=5V)
1000 500
100 50
125˚C 25˚C
–30˚C
10
5 0.02
0.1 0.5 1 Collector Current IC(A)
5
Transient Thermal Resistance...
