BRIDGE RECTIFIER. RS803 Datasheet


RS803 RECTIFIER. Datasheet pdf. Equivalent


RS803


SINGLE-PHASE SILICON BRIDGE RECTIFIER
WILLAS

RECRTSI8F0I1ER
THRU

FM

1.0A SSUINRGFLAEC-EPHMAOSUENTSISLCICHOONTTBKRYIDBAGRERRIEERCRTIEFCIETRIFIERS -20V- 200VRS807
VOLTAGE RANGE 50 to 1000 Volts CURRENT S8.O0DA-m12pe3r+es PACKAGE

FM
Pb

Features
• Batch process design, excellent power dissipation offers

Package outline

better reverse leakage current and thermal resistance.

SOD-123H

FEATUR•ELSow profile surface mounted application in order to
* Low leakaogpetimize board space.
M C C EETSSH22RAJ-U-LLMic*****roSLMIHdCouioeogwruamhgnlmeffotfeoioorn•••••rrwrcvgwiUGHHLaeapalporrrliiuCrlditggowondorashhaamtvriespdotdpschiduooloruutrirniwangacgrrneg:igrthenergieetAnce-rscnsugfnlTocuMpti:oytrarce2srbpoea5esoanv2$0p,da0t
ebahra7%scridib3mlvwgais6i	tohlppiyiMtltae.cteyabrah,rfeiifglllilsiiaoncet	y!!wpSgiepet.r
fnrea""ooe##cktrtyowCe.mhcaaptrtiosdonwnevon.rottshltage drop.

0.146(3.7) 0.130(3.3)
RS-6

0.012( 0.071(1

FeMaEtuCrHeAs•NSICilAicLonDeApTiAtaxial planar chip, metal silicon junction.

•
2 Amp Super Fast•

**RULEeoppLaHoodlxSixsyFytCmre:eod•eDemeetFLMpthsvileniiaIUciasLnreLhetd-./9cSRh-4SofaoTrgeHVseDen-SU0eioz-CLr1fepldaod9efammlr5acirmnpmot0glsaima0mbinnmpilta/fi(oot2Nbeyrnm2ioerleait8atetntytitnie1ocgd)nnli()arv"ePsicsr"otiSofinucryfmaf,itxifeoidlnneest#9aigE4lnV1as9-tteO5as7n1d1ards

of

Reco...



RS803
WILLAS
RECRTSI8F0I1ER
THRU
FM
1.0A SSUINRGFLAEC-EPHMAOSUENTSISLCICHOONTTBKRYIDBAGRERRIEERCRTIEFCIETRIFIERS -20V- 200VRS807
VOLTAGE RANGE 50 to 1000 Volts CURRENT S8.O0DA-m12pe3r+es PACKAGE
FM
Pb
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
FEATURELSow profile surface mounted application in order to
* Low leakaogpetimize board space.
M C C EETSSH22RAJ-U-LLMic*****roSLMIHdCouioeogwruamhgnlmeffotfeoioorn•••••rrwrcvgwiUGHHLaeapalporrrliiuCrlditggowondorashhaamtvriespdotdpschiduooloruutrirniwangacgrrneg:igrthenergieetAnce-rscnsugfnlTocuMpti:oytrarce2srbpoea5esoanv2$0p,da0t ebahra7%scridib3mlvwgais6i tohlppiyiMtltae.cteyabrah,rfeiifglllilsiiaoncet y!!wpSgiepet.r fnrea""o oe##cktrtyowCe.mhcaaptrtiosdonwnevon.rottshltage drop.
0.146(3.7)
0.130(3.3)
RS-6
0.012(
0.071(1
FeMaEtuCrHeAsNSICilAicLonDeApTiAtaxial planar chip, metal silicon junction.
2 Amp Super Fast
**RULEeoppLaHoodlxSixsyFytCmre:eodeDemeetFLMpthsvileniiaIUciasLnreLhetd-./9cSRh-4SofaoTrgeHVseDen-SU0eioz-CLr1fepldaod9efammlr5acirmnpmot0glsaima0mbinnmpilta/fi(oot2Nbeyrnm2ioerleait8atetntytitnie1ocgd)nnli()arv"ePsicsr"otiSofinucryfmaf,itxifeoidlnneest#9aigE4lnV1as9-tteO5as7n1d1ards
of
Recovery Rectifier* MoistureSRenosHitivSitypLreovdeul 1ct for packing code suffix "G"
50 to 600 Voltsx
x
*
MPRSboua-HprFkeSrirnepegfarop:sdatCHucsackwattahliftoogocregdhpeieinsanbgcakasvfinrnpaedgieleaeacbodnplddeureontysddpueueffrcixn3tu"5fGmno"srbepra(cNkoin'-gL'
code suffix
Suffix)
"H"
Mechanical dataHalogen free product for packing code suffix "H"
.300
(7.50)
.780(19.80)
.740(18.80)

.935(23.70)
.895(22.70)
.700(17.80)
.600(16.80)
AC
0.056(1
MaOxpiemratuingmTEepRmopaextryaint:urgUe:sL-6954к-Vto0+1r7a5tкed flame retardant

DO-214AC
Storage TeCmapesraetu:reM: -o6l5dкetdo +p1la75sкtic, SOD-123H
(SMA) (LEAD FRAME) 0.031(0.8) Typ.
MCC
H,
TermMianxaimlsum:Plated terminalsM, asxoimldumerDaCble per MIL-STD-750

.052(1.30) DIA.
.048(1.20)
1.00
(25.40) MIN.
0.040(1
0.024(0
0.031
SMRPiaaAEntrgiStXnlN2egIAMusp-maLUhbtaMe2sr5ePR,oCoAhPlaTaaelRmIfarNVekbiw5otGci0RyaelutVSavnre:rgetveAeI,etnenr6NtsmMd0eDpieHceEtrzahaR,LttoMruMeEerdSdCae3sxi5T2VusbiVmtnRo0yilvulteI2aemCcsg6saAoerotLhtihnCoedHdruwcBeAVitsl5iooRbve0lcteAVaaksigplCnnoeegTdacdEif.iRedIS. TICS
.220(5.60)
.180(4.60)
.140
J (3.50)
.280(7.10)
Dimensions in inches and (millimeters)
F oEr Sc2aBp-aLc i t
ES2D-L
i
vMe ol ouand21t,00idn00eVVgr aPt eocsuirtrieonn1t74b:00yVAV2n0y% .
100V
200V
.260(6.60)
ES2G-L
ES2J-L
Weigh40t0:VApproxim2a80tVed
600V
420V
0.011
g4r0a0Vm
600V
A DimensionsCin inches and (millimeters)
Electrical Characteristics @ 25°C Unless Otherwise Specified
MAXIMUM RATINGS ANDMAXAIMveUraMgReAFToIrNwGaSrd(At TA = 2IF5(oACV) unless 2o.t0heArwiseTnLo=te1d1)0к
E
ELECTFRICAL
CHDARACBTERISTICS
Current
PeRaak tFinorgwsaradtS2u5rge
amRIFAbSTMieINnGtStem50pAeratu8.r3emus,nhlaelfsssinoetherwSiYsMeBsOpLeGcifieRSd8.01 DIMERNSSIO8N0S 2
RS803
RS804
RS805
RS806
RS807
UNITS
MaCMxuaSimrxriuienmmngutlRmeecpuhrraenstePehaaklfRwevaervsee ,V6ol0taHgez, resistive of inductive loVaDRIdMRM.
INCHES
MIN
50MAX
1MI0NM0M
MA2X00 NOT4E 00
600
800
1000 Volts
 MaIFnxosFimrtwaounarmtradcRnaVeMpooSlautasBcgriietdivgeeInlopuatdV,odltaegreate current by 20%
A
VRCBMS
D
.079
.050
.002
---
.096
35.064
.008
.02
2.00
701.27
.05
---
2.44
1..26013 40
.51
280
420
560
700 Volts
MaxEimSu2mA-DLC-EEBSSl2oD2cGk-iLn-Lg
Vol
tag
eVF
R
A
T
IN.9G5VS
1.25V
IFM = 2.0A;TJ=25oC SYVMEDF CBOL..003605FM1520..0006901-MH F11..760M650130-M12..53222H00FM14040-M0 H FM610500-MH 8F0M0 160-M10H00 FM1V8o0lt-sMH FM1100-MH F
G .189
.220
4.80
5.59
MaxMimaurmkinAgveECraSog2edJeF-Lorward Rectified Ou1tp.7u0t VCurrent at Tc = 75oC
withMhaeaxtimsinukmESR2Je-cLurrent Peak R.1e9.72v55eVVr((TMsyeapx))VIoFMlta=g2e.0A;TJ=150oC
IHJO
VRRM
12.157
.181
.090
.115
134.00
2.25
4.60
2.92
SUG2G0ESTED SOL3DE0R
148.0
40
15
50
16
60
1A8mps
80
10
100
PsueMRpaMeekarvxiaFmeimoxrprsiuwomemsaeCurddDmuorSCrnueRrnrgaMtetAeSCdt ulVorraoednltta8g.I3Rems
single half
5µA
sine-wave
TA = 25к
VIRFSMMS
PAD LAYOUT
14 0.090” 21
28200 35
42
5Am6ps
70
RMataedxiDmCuBmloDckCingBlocking Voltage1mA TA = 100к
OpVeorlatatingge and Storage Temperature Range
TVJ,DTSCTG
20
30 40 50
-55 to + 150
60
80 100
0C
MMaxaimxiummuRmevAevrseerage FoTrwrr ard Re35cntisfied ICF=u0r.r5eAn, tIR=1.0A,
  Recovery Time
Irr=0.25A
ELETCCPyaTpepRiaacICackiAltFaJLunoCncrewcHtAiaorRndASCTuErgReISCTIuCCrJSre(nAtt T8A.3=1m52p5soFCsuinngle1Mls.e0es MaohstaHhuelzrfre,wsdViisnReae=tn4-ow.t0eadVv) e
Notessu: p1.erHiimghpToemspeedratuorenSrCoaldHteeAr EdRxeAlomCapTtdioEn(RAJpIESplDiTedIE,CsCSee mEUeDtihreoctdive) Annex Notes 7.
IO
 
SYIFMSBMOL
0.085”
RS801
RS802
R0.0S780”03
RS804
RS805
RS806
1.0
 
3R0S807
UNITS
MaxTimyupmicFaol rTwharedrVmoaltal gReeDsriosptapnerceele(mNeontteat28).0A DC
MaxTimypumicaRleJveurnsectCiounrreCntaaptaRcaitteadnce (Note 1@) TA = 25oC
DC OBlpocekriangtinVgoltTageemppereerlaetmuernet Range
@TC = 100oC
RVΘFJA
CIRJ
TJ
 
 
-55 to +125
1.1
5
0.2
40
120
 
 Volts
 uAmps
mAmps-55 to +150
Storage Temperature Range
www.mccsemi.com 
TSTG
- 65 to +175
Rev2isi0on1: D2.12
CHARACTERISTICS 1 of 3
Maximum Forward Voltage at 1.0A DC
WILLAS ELECTRONIC CORP.SYMBOL FM120-MH FM130-M2H0F1M2/10450/-2M5H FM150-MH FM160-MH FM180-MH FM1100-MH FM
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
0.5

RS803
WILLAS
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
RECRTSI8F0I1ER
THRU
RS807
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
20
10
5
2 TC = 150 (TYP)
1
TC = 25 (TYP)
0.5
0.2 pulse test
per one diode
0.1
0.4 0.6 0.8 1 1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
260
sine wave
0
200
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
100
0
12
5 10 20
50 100
NUMBER OF CYCLE
POWER DISSIPATION
28
sine wave
24 Tj=150
20
16
12
8
4
0
0 2 4 6 8 10 12 14
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
9
8
heatsink
Tc
Tc
7
6
sine wave
5 R-load
on heatsink
4
3
2
1
00 25 50 75 100 125 150 175
CASE TEMPERATURE, ( )
2012.12
WILLAS ELECTRONIC CORP.




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