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SD101AW

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW SCHOTTKY BARRIER DIODE S...


JCET

SD101AW

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW SCHOTTKY BARRIER DIODE SOD-123 FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Negligible Reverse Recovery Time MARKING: S1 The marking bar indicates the cathode Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Value Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 RMS Reverse Voltage VR(RMS) 42 Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms IFM IFSM 15 2.0 Power Dissipation Pd 400 Thermal Resistance Junction to Ambient RθJA 250 Junction temperature Tj 125 Storage Temperature TSTG -55~+150 Unit V V mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min VR 60 VF Typ Max 0.41 1.00 Unit V V IRM 0.2 µA CT 2.0 pF trr 1.0 n s Conditons IR=10µA IF=1.0mA IF=15mA VR=50V VR=0V,f=1.0MHz IF=IR=5mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 G,Mar,2015 Typical Characteristics FORWARD CURRENT IF (mA) 15 10 Pulsed Forward Characteristics 1 Ta=100℃ 0.1 Ta=25℃ 0.01 1E-3 0 100 200 300 400 500 600 700 FORWARD VOLTAGE VF (mV) Capacitance Characteristics 2.5 Ta=25℃ f=1MHz 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 POWER DISSIPATION PD (mW) REVERSE CURRENT IR ...




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