JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SD101AW
SCHOTTKY BARRIER DIODE
S...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SD101AW
SCHOTTKY BARRIER DIODE
SOD-123
FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Negligible Reverse Recovery Time
MARKING: S1
The marking bar indicates the cathode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Value
Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM
VR
60
RMS Reverse Voltage
VR(RMS)
42
Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms
IFM IFSM
15 2.0
Power Dissipation
Pd 400
Thermal Resistance Junction to Ambient
RθJA
250
Junction temperature
Tj
125
Storage Temperature
TSTG
-55~+150
Unit
V
V mA A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter Reverse breakdown voltage Forward voltage
Reverse current
Capacitance between terminals Reverse recovery time
Symbol Min VR 60
VF
Typ
Max
0.41 1.00
Unit V
V
IRM 0.2 µA
CT 2.0 pF trr 1.0 n s
Conditons IR=10µA IF=1.0mA IF=15mA
VR=50V
VR=0V,f=1.0MHz IF=IR=5mA
Irr=0.1XIR,RL=100Ω
www.cj-elec.com
1
G,Mar,2015
Typical Characteristics
FORWARD CURRENT IF (mA)
15
10 Pulsed
Forward Characteristics
1
Ta=100℃
0.1
Ta=25℃
0.01
1E-3 0
100 200 300 400 500 600 700
FORWARD VOLTAGE VF (mV)
Capacitance Characteristics
2.5
Ta=25℃ f=1MHz
2.0
1.5
1.0
0.5
0.0 0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
POWER DISSIPATION PD (mW)
REVERSE CURRENT IR ...