B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
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Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
+~
+~ ~−
~−
Case Style WOG
PRIMARY CHARACTERISTICS
Package
WOG
IF(AV) VRRM IFSM
IR VF at IF = 1.0 A
TJ max. Diode variations
1.0 A 65 V, 125 V, 200 V, 400 V, 600 V
45 A 10 μA 1.0 V 125 °C Quad
FEATURES
• Ideal for printed circuit boards
• High case dielectric strength • High surge current capability
e4
• Typical IR less than 0.1 μA • Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40 C1000G
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R- and C-load
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Maximum average forward output current R- and L-load
for free air operation at TA = 45 °C
C-load
VRRM VRMS VDC VRWM VRSM IFRM
IF(AV)
65 40 65 90 100
Peak forward surge current single sine-wave on rated load
Rating for fusing at TJ = 125 °C (t < 8.3 ms)
Minimum series resistor C-load at VRMS = ± 10 %
Maximum load capacitance
+ 50 % - 10 %
IFSM I2t RT
CL
1.0 5000
Operating junction temperature range Storage temperature range
TJ TSTG
B80 C1000G
125 80 125 180 200
2.0
B125 C1000G
200 125 200 300 350 10 1.2 1.0 45 10 4.0
B250 C1000G
400 250 400 600 600
8.0
2500
1000
500
- 40 to + 125 - 40 to + 150
B380 C1000G
600 380 600 800 1000
UNIT
V V V V V A
A
A A2s 12
200 μF
°C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
B40 C1000G
B80 C1000G
Maximum instantaneous forward voltage drop per diode
1.0 A
VF
Maximum reverse current at rated repetitive peak voltage per diode
TA = 25 °C
IR
B125 C1000G
1.0
10
B250 C1000G
B380 C1000G
UNIT
V
μA
Revision: 08-Jul-13
1 Document Number: 88500
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40 C1000G
B80 C1000G
B125 C1000G
B250 C1000G
B380 C1000G
UNIT
Typical thermal resist.