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BU1206-E3, BU1208-E3, BU1210-E3
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
isoCink+™
+ ~~ -
Case Style BU
- ~~+
+~~ -
* Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating.
PRIMARY CHARACTERISTICS
Package
BU
IF(AV) VRRM IFSM
IR VF at IF = 6 A
TJ max. Diode variations
12 A 600 V, 800 V, 1000 V
150 A 5 μA 0.88 V 150 °C In-Line
FEATURES • UL recognition file number E309391 (QQQX2)
UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU12065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications.
MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range
TC = 85 °C (1) TA = 25 °C (2)
VRRM IO
IFSM I2t TJ, TSTG
Notes
(1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1206 600
BU1208 800 12 3.4
150
93 - 55 to + 150
BU1210 1000
UNIT V
A
A A2s °C
Revision: 16-Aug-13
1 Document Number: 84802
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BU1206-E3, BU1208-E3, BU1210-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward voltage per diode (1)
Maximum reverse current per diode
Typical junction capacitance per diode
IF = 6.0 A
rated VR 4.0 V, 1 MHz
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
VF
IR CJ
0.98 0.88
74 50
MAX. 1.05 0.95 5.0 250
-
UNIT V
μA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1206
Typical thermal resistance
RJC (1) RJA (2)
Notes
(1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1208 2.7 20
BU1210
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1206-E3/45
4.66
45
BU1206-E3/51
4.66
51
BU12065S-E3/45
4.66
45
BASE QUANTITY 20 250 20
DELIVERY MODE Tube
Paper tray Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
14 5
Average Forward Output Current (A) Average Forward Rectified Current (A)
12
10
With Heatsink
8
Sine-Wave, R-Load TC Measured at Device Bottom
6 TC TC
4
2
0 0 20 40 60 80 100 120 140 160 Case Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
4
3
2
1
Without Heatsink Sine-Wave, R-Load
Free Air, TA
0 0 25 50 75 100 125
Ambient Temperature (°C)
150
Fig. 2 - Forward Current Derating Curve
Revision: 16-Aug-13
2 Document Number: 84802
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Forward Power Dissipation (W)
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BU1206-E3, BU1208-E3, BU1210-E3
Vishay General Semiconductor
30
25
20
15
10
5
0 0 2 4 6 8 10 12 14 Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
100 TJ = 150 °C
10 TJ = 125 °C
1
0.1
TJ = 25 °C
Instantaneous Reverse Current (µA)
1000 100 10
TJ = 150 °C TJ = 125 °C
1
0.1 TJ = 25 °C
0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
100
Junction Capacitance (pF)
0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
10 0.1
1 10 Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
Revision: 16-Aug-13
3 Document Number: 84802
For technical q.