DatasheetsPDF.com

BU1208-E3 Dataheets PDF



Part Number BU1208-E3
Manufacturers Vishay
Logo Vishay
Description Bridge Rectifiers
Datasheet BU1208-E3 DatasheetBU1208-E3 Datasheet (PDF)

www.vishay.com BU1206-E3, BU1208-E3, BU1210-E3 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers isoCink+™ + ~~ - Case Style BU - ~~+ +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS Package BU IF(AV) VRRM IFSM IR VF at IF = 6 A TJ max. Diode varia.

  BU1208-E3   BU1208-E3


Document
www.vishay.com BU1206-E3, BU1208-E3, BU1210-E3 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers isoCink+™ + ~~ - Case Style BU - ~~+ +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS Package BU IF(AV) VRRM IFSM IR VF at IF = 6 A TJ max. Diode variations 12 A 600 V, 800 V, 1000 V 150 A 5 μA 0.88 V 150 °C In-Line FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU12065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 85 °C (1) TA = 25 °C (2) VRRM IO IFSM I2t TJ, TSTG Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air BU1206 600 BU1208 800 12 3.4 150 93 - 55 to + 150 BU1210 1000 UNIT V A A A2s °C Revision: 16-Aug-13 1 Document Number: 84802 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BU1206-E3, BU1208-E3, BU1210-E3 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode Typical junction capacitance per diode IF = 6.0 A rated VR 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle VF IR CJ 0.98 0.88 74 50 MAX. 1.05 0.95 5.0 250 - UNIT V μA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1206 Typical thermal resistance RJC (1) RJA (2) Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air BU1208 2.7 20 BU1210 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BU1206-E3/45 4.66 45 BU1206-E3/51 4.66 51 BU12065S-E3/45 4.66 45 BASE QUANTITY 20 250 20 DELIVERY MODE Tube Paper tray Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 14 5 Average Forward Output Current (A) Average Forward Rectified Current (A) 12 10 With Heatsink 8 Sine-Wave, R-Load TC Measured at Device Bottom 6 TC TC 4 2 0 0 20 40 60 80 100 120 140 160 Case Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current 4 3 2 1 Without Heatsink Sine-Wave, R-Load Free Air, TA 0 0 25 50 75 100 125 Ambient Temperature (°C) 150 Fig. 2 - Forward Current Derating Curve Revision: 16-Aug-13 2 Document Number: 84802 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Forward Power Dissipation (W) www.vishay.com BU1206-E3, BU1208-E3, BU1210-E3 Vishay General Semiconductor 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Average Forward Current (A) Fig. 3 - Forward Power Dissipation 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C Instantaneous Reverse Current (µA) 1000 100 10 TJ = 150 °C TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode 100 Junction Capacitance (pF) 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode 10 0.1 1 10 Reverse Voltage (V) 100 Fig. 6 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) Revision: 16-Aug-13 3 Document Number: 84802 For technical q.


BU1206-E3 BU1208-E3 BU1210-E3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)