isc N-Channel Mosfet Transistor
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective applicatio...
isc N-Channel Mosfet
Transistor
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=30℃
5
A
IDM
Drain Current-Single Plused
20
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
BUZ215
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
BUZ215
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.1
4.0
V
VSD
Diode Forward On-voltage
IS= 10A ;VGS= 0
1.6
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3.2A
1.5
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
250 µA
Gfs
Forward Transconductance
VDS= 25V;ID=3.2A
1.7
S
td(on)
Turn-on Delay ...