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BUZ325 Dataheets PDF



Part Number BUZ325
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet BUZ325 DatasheetBUZ325 Datasheet (PDF)

isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=27℃ 12.5 A IDM Drain Current-Si.

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=27℃ 12.5 A IDM Drain Current-Single Plused 50 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W BUZ325 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUZ325 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 400 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.1 4.0 V VSD Diode Forward On-voltage IS= 25A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 8A 0.35 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 1 µA Gfs Forward Transconductance VDS= 25V;ID=8A 8 S td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time VGS=10V; ID=3A; VDD=30V; RGS=50Ω 45 135 ns 465 tf Fall Time 135 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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