N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
1N80
1A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N80 is an N-channel mode powe...
Description
UNISONIC TECHNOLOGIES CO., LTD
1N80
1A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N80 is universally applied in high efficiency switch mode power supply.
FEATURES
* RDS(on)=13.5Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
1N80L-TA3-T
1N80G-TA3-T
1N80L-TF3-T
1N80G-TF3-T
1N80L-TF1-T
1N80G-TF1-T
1N80L-TM3-T
1N80G-TM3-T
1N80L-TN3-T
1N80G-TN3-T
1N80L-TN3-R
1N80G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-491.E
1N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.0
A
Drain Current
Continuous
ID
Pulsed (Note 1)
IDM
1.0
A
4.0
A
Single Pulsed (Note 2) Avalanche E...
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