TSF8N65C
®
TSF8N65C
Pb
Pb Free Plating Product
7.5A,650V Insulated N-Channel Type Power MOSFETs
Features
■ High ru...
TSF8N65C
®
TSF8N65C
Pb
Pb Free Plating Product
7.5A,650V Insulated N-Channel Type Power MOSFETs
Features
■ High ruggedness
■ RDS(on) (Max 1.0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1. Gate{
{ 2. Drain
{
◀▲
●
{ 3. Source
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application.
Absolute Maximum Ratings
BVDSS = 650V RDS(ON) = 1.0 ohm ID = 7.5A
TO-220F
DS G
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min.
-
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 650 7.5
4.6 30
±30
560 14 4.5 140 1.14 - 55 ~ 150
...
