ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Description The ACE7401B uses advanced trench technology to ...
ACE7401B
P-Channel Enhancement Mode Field Effect
Transistor
Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-30V ID=-29A (VGS=-10V) RDS(ON)<13mΩ (VGS=-20V) RDS(ON)<14mΩ (VGS=-10V) RDS(ON)<17mΩ (VGS=-5V)
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25 OC TA=100 OC
Drain Current (Pulse)C
Drain Current (Continuous)
TA=25 OC TA=75 OC
Power Dissipation B
TA=25 OC TA=100 OC
Power Dissipation A
TA=25 OC TA=70 OC
Operating and Storage Temperature Range
Symbol Max Unit
VDSS -30 V VGSS ±25 V
-29 ID -23
IDM -60 A
-12
IDSM
-9.7
PD PDSM
29 12
W 3.1 2
TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
t≦10s
Maximum Junction-to-Ambient AD Steady-State
RθJA
30 40 60 75 OC/W
Maximum Junction-to-Lead Steady-State RθJL 3.5 4.2
VER 1.2 1
Packaging Type DFN3*3-8L
ACE7401B
P-Channel Enhancement Mode Field Effect
Transistor
Ordering information
ACE7401B XX + H
Halogen - free Pb - free NN : DFN3*3-8L
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage Forward Transconductance
Diode Forward Voltage Maxi...