ACE7407A

ACE7407A P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter VER 1.1 1 ACE7407A P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -2.3 A -1.7 Pulsed Drain Current IDM -6 A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA -1.4 A 0.33 W 0.21 -5...