MBR30100FCT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR30100FCT SCHOTTKY BARRIER RECTIFIER FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications TO-220F 1. ANODE 2. CATHODE 3. ANODE 123 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM VR VR(RMS) IO Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current IFSM Non-Repetitive peak forward surge current 8.3ms half sine wave PD RΘJA Tj Tstg Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 100 70 30 200 2 50 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage V(BR) IR=1mA 100 Reverse current IR VR=100V Forward voltage VF1 VF2* IF=15A IF=30A Typical total capacitance Ctot VR=4V,f=1MHz *Pulse test Typ 300 Max 0.1 1 1.05 Unit V V A A W ℃/W ℃ ℃ Unit V mA V V pF www.cj-elec.com 1 E,Apr,2016 Typical Characteristics FORWARD CURRENT IF (mA) 30000 10000 Forward Characteristics 1000 100 =25℃ =100℃ 10 T a T a 1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE VF (mV) ...