3DG3904

NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG3904 MAIN CHARACTERISTICS Package IC VCEO PC (TO-92) PC (SOT-23) 0.2A 40V 0.625W 0.350W APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit SOT-23 TO-92 FEATURES z z Epitaxial silicon z z High switching speed z 3CG3906 z Complementary to 3CG3906 z（RoHS） z RoHS product ORDER MESSAGE Order codes Marking 3DG3904-O-T-N-C 3DG3904-O-T-N-A 3DG3904-O-N1-N-A 3904 3904 I Halogen Free NO NO NO Package TO-92 TO-92 SOT-23 Packaging Bag Brede Brede ：201510B 1/7 R 3DG3904 ABSOLUTE RATINGS (Tc=25℃) Parameter — — — Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Total Dissipation (SOT-23) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PC Tj Tstg Value 60 40 6 0.2 0.625 0.350 150 -55~+150 Unit V V V A W W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Hfe(1) IC=10uA,IE=0 IC=1mA,IB=0 IE=10uA,IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE =1V, IC=0.1mA 60 - 40 - 6-- - 50 - - 50 40 Hfe(2) Hfe(3) Hfe(4) VCE =1V, VCE =1V, VCE =1V, IC=1mA IC=10mA IC=50mA 70 100 200 300 60 Hfe(5) VCE(sat) VCE =1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA 30 - - 0.2 - - 0.3 VBE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA fT VCE...