3DG5551

NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG5551 MAIN CHARACTERISTICS Package IC VCEO PC (TO-92) PC (SOT-23) 0.6A 160V 0.625W 0.350W APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit SOT-23 TO-92 FEATURES z z Epitaxial silicon z z High switching speed z 3CG5401 z Complementary to 3CG5401 z（RoHS） z RoHS product ORDER MESSAGE Order codes Marking 3DG5551-O-T-N-C 3DG5551-O-T-N-A 3DG5551-O-N1-N-A 5551 5551 G Halogen Free NO NO NO Package TO-92 TO-92 SOT-23 Packaging Bag Brede Brede ：201509A 16 R 3DG5551 ABSOLUTE RATINGS (Tc=25℃) Parameter — — — Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Total Dissipation (SOT-23) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PC Tj Tstg Value 180 160 6 0.6 0.625 0.350 150 -55~+150 Unit V V V A W W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Hfe(1) IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE =5V, IC=1mA 180 - - 160 - - 6-- - - 50 - - 50 80 - - Hfe(2) Hfe(3) VCE(sat) VBE(sat) VCE =5V, IC=10mA VCE =5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA 80 160 250 80 - - - 0.15 - - 0.2 - - 1.0 - - 1.0 fT VCE=10V, IC=50mA THER...