3DG9014

NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG9014 MAIN CHARACTERISTICS Package IC VCEO PC 100mA 45V 450mW z APPLICATIONS z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9015 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9015 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3DG9014-O-T-N-C 3DG9014-O-T-N-A 9014 9014 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201501A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature 3DG9014 Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 50 45 5 100 450 150 -55~+150 Unit V V V mA mW ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE =5V, IC=1mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=10mA 50 45 5 250 150 Value(typ) Value(max) -- -- -- - 50 - 50 350 450 0.14 0.3 0.84 1.0 270 - Unit V V V nA nA V V MHz : Hfe THERMAL CHARACTERISTIC Parameter TO-92 Thermal Resistance Junction Ambient TO-92 Symbol Value(min) Value(max) Unit Rth(j-a) - 278 ℃/W ：201501A 2/5 VCEsat hFE R ELECTRICAL CHARACTERISTICS ...