3FT1N2

R TRIACS 3FT1N2 MAIN CHARACTERISTICS Package IT(RMS) VDRM IGT 1.0A 800V 10mA APPLICATIONS Pin 1 2 3 Description 1 MT1 G 2 MT2 z z z AC switching z Phase control FEATURES SOT-223 z ， z z RoHS z Glass-passivated mesa chip for high reliability and uniform z Low on-state voltage and High ITSM z RoHS products ORDER MESSAGES Order code Marking 3FT1N2-O-N-B-A 3FT1N2 Package SOT-223 Packaging Tape ：201503B 1/7 R 3FT1N2 ABSOLUTE RATINGS (TC=25℃) Parameter Repetitive peak off-state voltage Symbol VDRM Condition Value Unit ±800 V On-state RMS current Nonrepetitive surge peak on-state current IT(RMS) ITSM I2t full sine wave full sine wave ,t=20ms full sine wave ,t=16.7ms t=10ms 1.0 A 10 A 11 A 0.5 A2s Repetitive rate of rise of on-state current after triggering Peak gate current Average gate power Storage temperature Operation junction temperature dI/dt IGM PG(AV) Tstg TVJ MT1(-),MT2(+),G(+)； MT1(-),MT2(+),G(-)； MT1(+),MT2(-),G(-) 50 A/μs 2A 0.5 W -40~150 ℃ 125 ℃ ：201503B 2/7 R 3FT1N2 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=2A Min Typ Max Unit - - 0.5 mA - - 1.5 V Gate trigger current MT1(-),MT2(+),G(+) IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) - mA - 10 mA mA Gate trigger voltage Holding current Latching current MT1(+),MT2(-...